发明名称 |
PROGRAMMABLE RESISTIVE MEMORY CELL WITH FILAMENT PLACEMENT STRUCTURE |
摘要 |
Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
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申请公布号 |
US2010110759(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20080263562 |
申请日期 |
2008.11.03 |
申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
JIN INSIK;HUTCHINSON CHRISTINA;LARSON RICHARD;STOVER LANCE;NAM JAEWOO;HABERMAS ANDREW |
分类号 |
G11C11/00;G11C11/34;H01L21/00;H01L21/4763;H01L29/76;H01L47/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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