GaAs SUBSTRATE, MULTILAYER SUBSTRATE AND ELECTRONIC DEVICE USING THE SAME, DUMMY GaAs SUBSTRATE, AND GaAs SUBSTRATE FOR REUSE

摘要

PROBLEM TO BE SOLVED: To provide a GaAs substrate, along with a multilayer substrate and an electronic device using the same, a dummy GaAs substrate, and a GaAs substrate for reuse, of which warping is reduced. SOLUTION: The GaAs substrate 12 is such GaAs substrate 12 where an epitaxial layer 13 is film-formed. Here, the concentration of Si that is added (C[Si] cm-3) and the concentration of B(C[B] cm-3) satisfy two equations: equation (1) 4.0×1017≤C[Si]≤1.0×1019, and equation (2) C[B]≥4.8×105×C[Si]0.7. In other words, inventors newly found that warping of a substrate 10 is reduced if the epitaxial layer 13 is film-formed on such GaAs substrate 12 as satisfies the two equations, or the equation (1) and the equation (2). COPYRIGHT: (C)2010,JPO&INPIT