| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element for suppressing a p-side electrode from peeling from a p-side nitride semiconductor layer while suppressing rising of an operation voltage. Ž<P>SOLUTION: The nitride semiconductor laser element includes a p-side ohmic electrode 6 including electrode layers 7 and 8. The electrode layer 7 is made from an electrode material better in ohmic contact to a p-type nitride semiconductor than a composition material of the electrode layer 8, and is formed as an island on a p-type nitride semiconductor layer 4. The electrode layer 8 is made from an electrode material having a higher adhesiveness to the p-type nitride semiconductor than the composition material of the electrode layer 7, and is formed on the electrode layer 7 to fill a gap 7a of the electrode layer 7. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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