发明名称 Semiconductor memory device having driver for compensating for parasitic resistance of data input-output pads
摘要 A semiconductor memory device that includes a supply voltage pad, a ground voltage pad, and at least two data input/output pads arranged between the supply voltage pad and the ground voltage pad. The semiconductor memory device has a first pull-up driver that is connected to the second data input/output pad located at a first distance from the supply voltage pad, and a first pull-down driver that is connected to the first data input/output pad located at a second distance from the ground voltage pad.
申请公布号 US2010110749(A1) 申请公布日期 2010.05.06
申请号 US20090461141 申请日期 2009.08.03
申请人 CHUNG HAE-YOUNG;KIM YANG-KI;CHOI SEOK-WOO 发明人 CHUNG HAE-YOUNG;KIM YANG-KI;CHOI SEOK-WOO
分类号 G11C5/06;G11C8/08;H01S4/00 主分类号 G11C5/06
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