发明名称 |
Semiconductor memory device having driver for compensating for parasitic resistance of data input-output pads |
摘要 |
A semiconductor memory device that includes a supply voltage pad, a ground voltage pad, and at least two data input/output pads arranged between the supply voltage pad and the ground voltage pad. The semiconductor memory device has a first pull-up driver that is connected to the second data input/output pad located at a first distance from the supply voltage pad, and a first pull-down driver that is connected to the first data input/output pad located at a second distance from the ground voltage pad.
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申请公布号 |
US2010110749(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20090461141 |
申请日期 |
2009.08.03 |
申请人 |
CHUNG HAE-YOUNG;KIM YANG-KI;CHOI SEOK-WOO |
发明人 |
CHUNG HAE-YOUNG;KIM YANG-KI;CHOI SEOK-WOO |
分类号 |
G11C5/06;G11C8/08;H01S4/00 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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