发明名称 |
PROGRAMMABLE RESISTIVE MEMORY CELL WITH SACRIFICIAL METAL |
摘要 |
Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. A sacrificial metal is disposed between the electrochemically active electrode and the inert electrode. The sacrificial metal has a more negative standard electrode potential than the filament forming metal
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申请公布号 |
US2010108978(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20090500899 |
申请日期 |
2009.07.10 |
申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
VENKATASAMY VENKATRAM;SUN MING;SETIADI DADI |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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