| 摘要 |
The present disclosure relates to a thin film transistor array panel and a manufacturing method thereof. The method comprises: forming a thin film transistor on a substrate; forming a color filter adjacent to the thin film transistor and over the same substrate; depositing a first passivation layer on the color filter; coating a photosensitive film on the first passivation layer and exposing the photosensitive film to light using a first photomask to form a first photosensitive film pattern that comprises a first portion and a second portion that is thicker than the first portion, the first photosensitive film pattern exposing the first passivation layer around a circumference of the second portion; removing the exposed first passivation layer using the first photosensitive film pattern as an etch mask; blanket etching a whole surface of the first photosensitive film pattern until the first portion is removed to form a second photosensitive film pattern; depositing a conductive layer on the second photosensitive film pattern; and removing the second photosensitive film pattern to thereby selectively lift off portions of the conductive layer where a left behind portion forms a pixel electrode. |
