<p>A semiconductor laser element (1) comprises an active layer (11), an n-type carrier-blocking layer (13) that is arranged so as to be adjacent to the active layer (11) and has a wider bandgap width than that of a barrier layer (11b), an n-type waveguide layer (14) that is arranged on the side opposite to the active layer (11) of the n-type carrier-blocking layer (13) so as to be adjacent to the n-type carrier-blocking layer (13), an n-type clad layer (15) that is arranged on the side opposite to the active layer (11) of the n-type waveguide layer (14) so as to be adjacent to the n-type waveguide layer (14) and has a wider bandgap width than that of the n-type waveguide layer (14), and a p-type clad layer (12) that is arranged on the side opposite to the n-type carrier-blocking layer (13) of the active layer (11) so as to be adjacent to the active layer (11) and has a wider bandgap width than those of the barrier layer (11b) and the n-type waveguide layer (14).</p>
