发明名称 |
PHOTOMASK BLANK, PHOTOMASK AND METHOD FOR MANUFACTURING THE PHOTOMASK |
摘要 |
<p>Provided is a photomask blank to be used for manufacturing a photomask (100) to which exposure light with a wavelength of 200 nm or less is to be applied. The photomask blank is provided with a light transmitting substrate (1), and a light blocking film (10) formed on the light transmitting substrate. The light blocking film has a light blocking layer (12), which contains a transition metal and silicon, and a surface reflection preventing layer (13), which is formed on the light blocking layer in contact with the light blocking layer and is composed of a material containing oxygen and/or nitrogen. In the case where the surface reflectivity to the exposure light is a predetermined value or less and the film thickness of the surface reflection preventing layer fluctuates within the range of 2 nm, the light blocking film has characteristics of controlling the surface reflectivity such that the fluctuation range with the exposure wavelength is within 2%. A surface reflection preventing layer material having a refraction index (n) and an extinction coefficient (k) that give such characteristics is selected.</p> |
申请公布号 |
WO2010050447(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
WO2009JP68359 |
申请日期 |
2009.10.27 |
申请人 |
HOYA CORPORATION;IWASHITA, HIROYUKI;KOMINATO, ATSUSHI;HASHIMOTO, MASAHIRO;SHISHIDO, HIROAKI |
发明人 |
IWASHITA, HIROYUKI;KOMINATO, ATSUSHI;HASHIMOTO, MASAHIRO;SHISHIDO, HIROAKI |
分类号 |
G03F1/46;G03F1/50;G03F1/54;H01L21/027 |
主分类号 |
G03F1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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