METHOD OF FABRICATING SEMI-INSULATING GALLIUM NITRIDE USING AN ALUMINUM GALLIUM NITRIDE BLOCKING LAYER

摘要

A method for fabricating a single crystal, high quality, semi-insulating (SI) gallium nitride (GaN) layer using an AlxGai-xN blocking layer. A buffer layer is grown on a substrate, the AlxGai-xN blocking layer is grown on the buffer layer, and a single crystal, high quality, SI-GaN layer is grown on the AlxGai-xN blocking layer. The AlxGai-xN blocking layer acts as a diffusion blocking layer that prevents the diffusion of donors from the substrate from reaching the SI-GaN layer. The resulting SI-GaN layer reduces parasitic current flow and parasitic capacitive effects in electronic devices.