The driver circuit includes an inverter circuit having a first thin film transistor including a first oxide semiconductor film and a second transistor including a second oxide semiconductor film. The first thin film transistor and the second thin film transistor are enhancement transistors, in which a silicon oxide film including an OH group is provided on and in contact with the first oxide semiconductor film and the second oxide semiconductor film, and a silicon nitride film is provided on and in contact with the silicon oxide film.
申请公布号
WO2010050419(A1)
申请公布日期
2010.05.06
申请号
WO2009JP68292
申请日期
2009.10.19
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;KOYAMA, JUN;YAMAZAKI, SHUNPEI