| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress: oxidization of a lower electrode due to reaction between metal elements in the lower electrode and oxygen in a bonding layer; contamination due to diffusion of metal elements in the lower electrode to a semiconductor layer being a photoelectric conversion layer; and disappearance of the semiconductor layer due to reaction. <P>SOLUTION: The present invention relates to: a photoelectric conversion device which has, on a substrate having an insulating surface, a back surface electrode layer, a crystalline semiconductor layer having a semiconductor bonding, and a light-reception-surface electrode layer, wherein the back surface electrode layer is formed by laminating a first conductive layer formed of metal nitride or high-fusion-point metal, a second conductive layer consisting principally of aluminum (Al) or silver (Ag), and a third conductive layer having low reactivity with a semiconductor material; and a method of manufacturing the same. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
