| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable a signal charge to be smoothly read out while suppressing a dark current and to expand a dynamic range, in a CMOS solid-state imaging device, and to provide a method of controlling the same. Ž<P>SOLUTION: A buried photodiode is used for a photoelectric converter, and a negative voltage is applied to a transfer-gate electrode during a charge-storing period so as to prevent the dark current just below the transfer gate. A photodiode p<SP>+</SP>layer 350 is extended just below the sidewall of the photodiode at the transfer-gate electrode to suppress the dark current just below the sidewall. A negative substrate bias voltage is applied at a well region in transferring the charge from the photoelectric converter to read out smoothly the signal charge. The substrate bias voltage is varied during a charge storage to expand the dynamic range. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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