CONTACT FORMATION METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE

摘要

Provided is a method for manufacturing a semiconductor device realizing a contact of low resistance ratio. In the state that a first metal layer in contact with a semiconductor is coated with a second metal layer for preventing oxidization, only the first metal layer is silicided so as to form a silicide layer not mixed with oxygen.  The first metal layer is made from such a metal material that a difference in the work function from the semiconductor is a predetermined value.  The second metal layer is made from such a metal material that no reaction with the first metal layer is caused by the anneal temperature.