| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a fine pattern of high development contrast in pattern formation using extreme ultraviolet rays as exposure light. <P>SOLUTION: A resist film 102 made of resist material containing first polymer that does not contain acid-unstable group and contains lactone, second polymer containing acid-unstable group, and a photo-acid generator is formed on a substrate 101. Then, pattern exposure is performed by selectively irradiating the resist film 102 with the exposure light formed of the extreme ultraviolet rays. Then, development is applied to the resist film having undergone the pattern exposure, and a resist pattern is formed from the resist film. <P>COPYRIGHT: (C)2010,JPO&INPIT |
