| 摘要 |
PROBLEM TO BE SOLVED: To provide a high reliable semiconductor device which reduces the effect due to the diffusion of nitrogen and hydrogen from silicon nitride film for suppressing diffusion of metals from a metal wiring portion to an inter layer dielectric film, and to provide a manufacturing method for the device. SOLUTION: The semiconductor device 1 includes a semiconductor element portion 100 which is formed on a semiconductor substrate 2; a copper wiring 225 which is formed on the upper portion of the semiconductor element portion 100; a plug electrode 216 which electrically connects semiconductor element portion 100 to the copper wiring 225; a silicon oxide film 223 preventing the plug electrode 216 from oxidizing; an amorphous silicon film 217 which is formed on the upper portion of the semiconductor element portion 100; and a Cu diffusion preventing film 218, which is formed on the upper portion of the amorphous silicon film 217. COPYRIGHT: (C)2010,JPO&INPIT |
