REDUCING METAL VOIDS IN A METALLIZATION LAYER STACK OF A SEMICONDUCTOR DEVICE BY PROVIDING A DIELECTRIC BARRIER LAYER

摘要

Metallization systems on the basis of copper and low-k dielectric materials may be efficiently formed by providing an additional dielectric material of enhanced surface conditions after the patterning of the low-k dielectric material. Consequently, defects such as isolated copper voids and the like may be reduced without significantly affecting overall performance of the metallization system.