发明名称 HIGHLY DIELECTRIC FILM HAVING HIGH WITHSTANDING VOLTAGE
摘要 The present invention relates to a highly dielectric film formed by using (A) a fluorine-containing resin comprising vinylidene fluoride unit and tetrafluoroethylene unit in a total amount of not less than 95% by mole, and provides a film for a film capacitor which has high dielectric property and high withstanding voltage and can be made thin.
申请公布号 US2010110609(A1) 申请公布日期 2010.05.06
申请号 US20080524283 申请日期 2008.01.24
申请人 KOH MEITEN;YOKOTANI KOUJI;MATSUMURA MIHARU;MUKAI ERI;KOMATSU NOBUYUKI 发明人 KOH MEITEN;YOKOTANI KOUJI;MATSUMURA MIHARU;MUKAI ERI;KOMATSU NOBUYUKI
分类号 H01G4/18;C08F14/22;C08F14/26;C08L27/16;C08L27/18 主分类号 H01G4/18
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