发明名称 |
HIGHLY DIELECTRIC FILM HAVING HIGH WITHSTANDING VOLTAGE |
摘要 |
The present invention relates to a highly dielectric film formed by using (A) a fluorine-containing resin comprising vinylidene fluoride unit and tetrafluoroethylene unit in a total amount of not less than 95% by mole, and provides a film for a film capacitor which has high dielectric property and high withstanding voltage and can be made thin.
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申请公布号 |
US2010110609(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20080524283 |
申请日期 |
2008.01.24 |
申请人 |
KOH MEITEN;YOKOTANI KOUJI;MATSUMURA MIHARU;MUKAI ERI;KOMATSU NOBUYUKI |
发明人 |
KOH MEITEN;YOKOTANI KOUJI;MATSUMURA MIHARU;MUKAI ERI;KOMATSU NOBUYUKI |
分类号 |
H01G4/18;C08F14/22;C08F14/26;C08L27/16;C08L27/18 |
主分类号 |
H01G4/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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