发明名称 METHOD OF FABRICATING AN ELECTRODE FOR A BULK ACOUSTIC RESONATOR
摘要 In one embodiment, a method of producing a resonator in thin-film technology is described. The resonator comprises a piezoelectric layer arranged at least partially between a lower electrode and an upper electrode, the resonator being formed over a substrate. The method comprises: forming the lower electrode of the resonator over the substrate; depositing and patterning an insulating layer over the substrate, the insulating layer comprising a thickness substantially equal to a thickness of the lower electrode; removing a portion of the insulating layer to partially expose a surface of the lower electrode; removing a portion of the insulating layer over the surface of the lower electrode by chemical mechanical polishing; forming the piezoelectric layer over the lower electrode; and producing the upper electrode on the piezoelectric layer.
申请公布号 US2010107389(A1) 申请公布日期 2010.05.06
申请号 US20090646084 申请日期 2009.12.23
申请人 AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD. 发明人 NESSLER WINFRIED;THALHAMMER ROBERT;HERZOG THOMAS RAINER;HANDTMANN MARTIN;ELBRECHT LUEDER
分类号 H04R31/00;H01L41/083;H01L41/22 主分类号 H04R31/00
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