METHOD OF DETACHING SEMI-CONDUCTOR LAYERS AT LOW TEMPERATURE

摘要

The invention relates to a method for producing UTBOX type structures comprising: a) the assembly of a substrate, known as "donor" substrate (1), with a substrate, known as "receiver" substrate (2), at least one of the two substrates comprising an insulating layer (3) of thickness less than 50 nm, b) a first heat treatment for reinforcing the assembly between the two substrates, at temperature below 400°C, carried out during the assembly and/or after assembly, to reinforce said assembly, c) a second heat treatment at temperature above 900°C, the exposure time between 400°C and 900°C being less than 1 minute or 30 seconds.