| 摘要 |
<P>PROBLEM TO BE SOLVED: To control a composition or a defect of an oxide semiconductor and to obtain a sufficient on/off ratio while increasing the field effect mobility of a thin film transistor and suppressing off-state current. <P>SOLUTION: The oxide semiconductor is expressed by InMO<SB>3</SB>(ZnO)<SB>m</SB>(M= one or a plurality of element(s) selected from Ga, Fe, Ni, Mn, Co and Al; and m is a non-integer of at least 1 and less than 50). In this case, the concentration of Zn is made lower than those of In and M (M= one or a plurality of element(s) selected from Fe, Ga, Ni and Al). The oxide semiconductor includes an amorphous structure. Here, the value of m is preferably a non-integer of at least 1 and less than 50 and more preferably a non-integer less than 10. <P>COPYRIGHT: (C)2010,JPO&INPIT |
