| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device for further reducing skews generated by a difference in the wiring lengths to a memory cell. Ž<P>SOLUTION: The semiconductor storage device has a memory cell area for storing data and a command circuit, disposed around the central part of the chip to input an address and command for selecting the memory cell in the memory cell area, wherein an input buffer is disposed at an end of the memory cell area for inputting a signal generated, based on the address and command and an output buffer is disposed, at a position facing the input buffer in the memory cell area for writing the data to the selected memory cell or outputting the data read out of the selected memory cell. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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