SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR, APPARATUS FOR MANUFACTURING SEMICONDUCTOR, AND DISPLAY UNIT

摘要

PROBLEM TO BE SOLVED: To actualize an annealing treatment result of extremely high uniformity by absorbing deviation in strength between the irradiation beams of a laser optical system caused by errors of strength measuring instruments and thermal instability of the laser optical system.

SOLUTION: When crystallizing a semiconductor layer 14 constituting a semiconductor device so as to reform an amorphous silicon film to a microcrystal silicon film or a polycrystal silicon film, an annealing process for crystallization is repeated more than once including pre-anneal processing and anneal processing.

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