| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a plurality of trenches 3 with different aperture widths that suppresses more variations of a sidewall angle to a surface of a semiconductor substrate 1 in each trench 3 than by a conventional method of manufacturing the same. SOLUTION: The method of manufacturing the semiconductor device includes the steps of: forming a plurality of trenches 3 with different aperture widths corresponding to shapes of masks 2 for a semiconductor substrate 1; carrying out a trench protection film forming process including a process for forming in inner walls of a plurality of the trenches 3 a protection film 5 which is stronger in resistance against reactive ion etching than a polymer film 4 and that for forming a polymer film 4; and deepening the trenches by alternately repeating the trench forming process and trench protection film forming one. COPYRIGHT: (C)2010,JPO&INPIT
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