| 摘要 |
Disclosed is a compound semiconductor device comprising an n-type GaN layer (3), a GaN layer (7) formed above the n-type GaN layer (3), an n-type AlGaN layer (9) formed above the GaN layer (7), a gate electrode (15) and a source electrode (13) formed above the n-type AlGaN layer (9), a drain electrode (14) formed below the n-type GaN layer (3), and a p-type GaN layer (4) formed between the GaN layer (7) and the drain electrode (14). |
