Non-aqueous and semi-aqueous removal compositions for removing resist and/or other materials from microelectronic devices. The non-aqueous removal composition includes tetrahydrofurfuryl alcohol and at least one dibasic ester. The semi-aqueous removal composition includes tetrahydrofurfuryl alcohol, at least one dibasic ester, at least one corrosion inhibitor, and no more than 30 wt% water. The removal compositions effectively removes resist and/or other materials while not damaging the underlying low-k dielectric or metallic materials.
