| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering target to form a wiring film and a wiring base film for a gate electrode, a source electrode, a drain electrode and so on of a thin-film transistor with superior adhesiveness. <P>SOLUTION: The sputtering target for forming a wiring film for a thin-film transistor contains 0.1-5 atom% Mg and 0.1-10 atom% Ca, and it contains 0.1-10 atom% of one kind or total of two kinds of Mn and Al if needed. Furthermore, it also contains 0.001-0.1 atom% P if needed, and its remaining portion includes a composition of Cu and unavoidable impurities. <P>COPYRIGHT: (C)2010,JPO&INPIT |
