| 发明名称 |
OPTOELECTRONIC DEVICE BASED ON NON-POLAR AND SEMI-POLAR ALUMINUM INDIUM NITRIDE AND ALUMINUM INDIUM GALLIUM NITRIDE ALLOYS |
| 摘要 |
A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.
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| 申请公布号 |
US2010108985(A1) |
申请公布日期 |
2010.05.06 |
| 申请号 |
US20090610945 |
申请日期 |
2009.11.02 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
CHUNG ROY B.;CHEN ZHEN;SPECK JAMES S.;DENBAARS STEVEN P.;NAKAMURA SHUJI |
| 分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
| 代理机构 |
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