发明名称 Photomask quality estimation system and method for use in manufacturing of semiconductor device, and method for manufacturing the semiconductor device
摘要 A photomask quality estimation system comprises a measuring unit, a latitude computation unit and an estimation unit. The measuring unit measures the mask characteristic of each of a plurality of chip patterns formed on a mask substrate. The latitude computation unit computes the exposure latitude of each chip pattern based on the mask characteristic. The estimation unit estimates the quality of each chip pattern based on the exposure latitude.
申请公布号 US2010112812(A1) 申请公布日期 2010.05.06
申请号 US20090588968 申请日期 2009.11.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ARISAWA YUKIYASU;FUJISAWA TADAHITO;MIMOTOGI SHOJI
分类号 H01L21/033;G03F1/84;G06F17/50;G06F19/00;H01L21/027 主分类号 H01L21/033
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