发明名称 |
METHOD OF PERFORMING ERASE OPERATION IN NON-VOLATILE MEMORY DEVICE |
摘要 |
A method of performing an erase operation in a non-volatile memory device includes a multi-erase operation and a post-erase operation. The multi-erase operation includes multi-erasing multiple memory blocks at the same time using a multi-erase voltage. The post-erase operation includes post-erasing one or more failed memory blocks of the multi-erased memory blocks using a post-erase voltage having sequentially increasing voltage values based on incremental step pulses (ISPs).
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申请公布号 |
US2010110796(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20090609127 |
申请日期 |
2009.10.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JONG-YEOL;LEE JIN-YUB |
分类号 |
G11C16/04;G11C16/16 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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