| 摘要 |
PROBLEM TO BE SOLVED: To surely deposit a high purity thin film from a raw material activated by using plasma. SOLUTION: In a plasma-assisted reactive thin film deposition apparatus, a coil 4 for generating plasma is constituted of a substance comprising elements constituting a thin film to be deposited or covered with the substance. A plasma is generated in a chamber 10 by the coil 4 for generating plasma, and the element of a raw material evaporated from a crucible 6 for an evaporation source and the element of a gas introduced from a gas introduction port 7 are allowed to react in a plasma atmosphere and vapor-deposited on the surface of a substrate 2 together with the elements of the substance emitted by sputtering of the surface of the coil 4 for generating plasma. Thereby, a desired thin film can be deposited. COPYRIGHT: (C)2010,JPO&INPIT
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