| 摘要 |
PROBLEM TO BE SOLVED: To reduce variance in element shape while preventing a short circuit between two magnetic layers between which a nonmagnetic layer is sandwiched. SOLUTION: The magnetic memory includes an inter-layer insulating layer 26 provided on a substrate 20, a conductive base layer 11 provided on the inter-layer insulating layer 26, and a magneto-resistance element provided on the base layer 11 and including two magnetic layers 12 and 13 and a nonmagnetic layer 13 sandwiched therebetween. The etching rate of the base layer 11 is lower than those of the magnetic layers. COPYRIGHT: (C)2010,JPO&INPIT
|
