METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY

摘要

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor memory high in accuracy of widths of line and space. Ž<P>SOLUTION: The method of manufacturing the semiconductor memory includes steps of: forming a first pattern constituted of a silicon material film on a film to be worked; oxidizing both side surfaces and an upper surface of the first pattern to form a silicon oxide film and removing a part of the silicon oxide film formed on the upper surface to form a second pattern constituted of the silicon oxide films formed on both side surfaces; removing the first pattern to form a mask pattern constituted of the second pattern; and working the film to be worked, exposed from the mask pattern. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž