| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for power control of which a breakdown voltage is high but an on-resistance is low. Ž<P>SOLUTION: An n-type silicon layer 12 is formed on an n<SP>+</SP>type silicon wafer 11w, and a plurality of trenches 13 are formed in the n-type silicon layer 12. On the inner surface of the trench 13, a non-doped layer 14 containing substantially no impurities is formed. Then a p-type silicon peeler 15 is formed inside the trench 13. After that, an MOS structure is formed at the upper part of the n-type silicon layer 12. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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