| 摘要 |
In a method for manufacturing an electronic device, an ion implantation layer is formed at a desired depth from one principal surface of a piezoelectric single crystal substrate by implanting hydrogen ions into the piezoelectric single crystal substrate under desired conditions. The piezoelectric single crystal substrate in which the ion implantation layer has been formed is bonded to a supporting substrate, and a piezoelectric thin film is then formed by the application of heat using the ion implantation layer as a detaching interface. This heated detachment is performed at a reduced pressure less than atmospheric pressure and at a heating temperature determined in accordance with the reduced pressure.
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