| 摘要 |
A method for forming a pattern of a semiconductor device using a spacer patterning process comprises coating a developable antireflection film over a substrate including a spacer pattern, coating a photoresist film over the antireflection film, and patterning the antireflection film and the photoresist film by an exposing and developing process to form an etching mask pattern. The etching mask pattern has an excellent profile. When a lower underlying layer is etched using the etching mask pattern, a sufficient etching margin can be secured, thereby obtaining a reliable semiconductor device.
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