| 发明名称 |
ZUSAMMENSETZUNG ZUR REINIGUNG NACH EINER CHEMISCH-MECHANISCHEN PLANARISIERUNG |
| 摘要 |
A cleaning solution for cleaning microelectronic substrates, particularly for post-CMP or via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethylanolamine, ascorbic acid, and water with the alkalinity of the cleaning solution greater than 0.073 milliequivalents base per gram of solution. |
| 申请公布号 |
DE60141629(D1) |
申请公布日期 |
2010.05.06 |
| 申请号 |
DE2001641629 |
申请日期 |
2001.06.06 |
| 申请人 |
ADVANCED TECHNOLOGY MATERIALS INC. |
发明人 |
NAGHSHINEH, SHAHRIAR;BARNES, JEFF;XU, DINGYING |
| 分类号 |
H01L21/3105;C11D1/62;C11D3/00;C11D3/20;C11D3/28;C11D3/30;C11D7/26;C11D7/32;C11D7/60;C11D11/00;G03F7/42;H01L21/02;H01L21/304;H01L21/306;H01L21/311;H01L21/316;H01L21/321 |
主分类号 |
H01L21/3105 |
| 代理机构 |
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代理人 |
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