| 摘要 |
PROBLEM TO BE SOLVED: To prevent complex configuration of a prefetch circuit in a multiport MRAM (magnetic random access memory). SOLUTION: In the multiport MRAM, each magnetic memory cell is connected to a first word line, a first bit line, a second word line and a second bit line. A port control circuit performs writing processing in a write target cell through the first word line and the first bit line and performs reading processing from a read target cell through the second word line and the second bit line. When a write address and a read address match each other, a bit-line control circuit sets the potential level of the selected second bit line to a potential level that corresponds to the writing data on the selected first bit line. The port control circuit deactivates the reading processing and latches the data that correspond to the potential level of the selected second bit line. COPYRIGHT: (C)2010,JPO&INPIT
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