| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein a carrier does not enter a gate insulating film in an impact ionization region; and to provide a method of manufacturing the same. SOLUTION: The semiconductor device includes a transistor part 22 and a diode part 23. The transistor part 22 includes a channel forming region 6 which is a first conductive type or intrinsic semiconductor region, a gate insulating film 7 which is in contact with the channel forming region 6, a gate electrode 8 for forming a channel, a drain region 4 which is a second conductive type one, is in contact with the channel forming region 6, and is supplied with a drain voltage, and a source region 5 which is a second conductive type one, is opposite to the drain region 4 through the channel forming region 6, and is supplied with a drain voltage through the channel forming region 6 when the channel is formed on the channel forming region 6. The diode part 23 is electrically connected to the source region 5, and includes a region where an impact ionization phenomenon is generated when the drain voltage is supplied to the source region 5. COPYRIGHT: (C)2010,JPO&INPIT
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