| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and method for improving the uniformity of the film thickness present in the surface of a wafer. SOLUTION: A film forming apparatus for forming films on wafers 1 by a CVD method while feeding a processing gas to the wafers 1 includes a boat 2 for holding a plurality of wafers 1 so as to separate them from each other in the upper and lower directions, a processing chamber 12 for storing the wafers 1 and the boat 2, a heater 14 of the structure of a hot-wall form and for heating the wafers 1, a gas feeding pipe 21 for feeding the processing gas to the inside of the processing chamber 12, an exhausting pipe 16 for exhausting the atmosphere present in the processing chamber 12, and a rotating shaft 19 for rotating the boat 2 in order to rotate the wafers 1 during the processing of the wafers 1. COPYRIGHT: (C)2010,JPO&INPIT
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