| 摘要 |
<p>A method for manufacturing a semiconductor device, which comprises: a step of forming a mask layer (20) on a gate insulating film (18), said mask layer (20) having openings above the regions to be a low-concentration impurity region and a source/drain region in first and second semiconductor layers; a step of forming implantation regions (24b, 24c) of a first conductivity type respectively in the first and second semiconductor layers by implanting an impurity (22) of the first conductivity type into the first and second semiconductor layers through the openings of the mask layer (20); a step of respectively forming first and second gate electrodes (26b, 26c) covering a part of the implantation regions of the first conductivity type and the regions to be channel regions in the first and second semiconductor layers; a step of forming another mask layer (28) which has openings above the regions of the implantation region (24b) of the first conductivity type in the first semiconductor layer, said regions being on both ends of the first semiconductor layer, the entire area of the second semiconductor layer and a part of a third semiconductor layer; and a step of implanting an impurity of the first conductivity type into the first, second and third semiconductor layers through the openings of the another mask layer (28).</p> |
