Copper-gallium alloy sputtering target and method for fabricating the same

摘要

A method for fabricating a copper-gallium alloy sputtering target comprises forming a raw target; treating the raw target with at least one thermal treatment between 500 °C ~ 850 °C being mechanical treatment, thermal annealing treatment for 0.5 ~ 5 hours or a combination thereof to form a treated target; and cooling the treated target to a room temperature to obtain the copper-gallium alloy sputtering target that has 71 atomic% to 78 atomic% of Cu and 22 atomic% to 29 atomic% of Ga and having a compound phase not more than 25% on its metallographic microstructure. Therefore, the copper-gallium alloy sputtering target does not induce micro arcing during sputtering so a sputtering rate is consistent and forms a uniform copper-gallium thin film. Accordingly, the copper-gallium thin film possesses improved quality and properties.