PROCESSES FOR PRODUCING DIELECTRIC FILM AND SEMICONDUCTOR DEVICE, DIELECTRIC FILM, AND RECORDING MEDIUM

摘要

Disclosed is a process for producing a dielectric film having a high permittivity.  Specifically disclosed is a process for producing a dielectric film comprising a metal oxynitride comprising element A of Hf or a mixture of Hf with Zr, element B of Al, N, and O on a substrate.  The process comprises the step of forming a metal oxynitride that has a molar ratio among element A, element B, and N of 0.015 = (B/(A+B+N)) = 0.095 and 0.045 = (N/(A+B+N)), has an element A to O molar ratio, i.e., O/A, of 1.0 < (O/A) < 2.0, and has a noncrystal structure, and the step of annealing the metal oxynitride having a noncrystal structure at 700°C or above to form a metal oxynitride having a crystal phase having a cubical crystal mixing rate of not less than 80%.