发明名称 FET-based gas sensor
摘要 An operating method is disclosed for the selective detection of a target gas in a gas mixture to be measured by a field effect transistor with a gas-sensitive layer disposed on a carrier substrate, wherein the gas mixture to be measured is prepared by an electrochemical element such that the measured gas mixture includes minimal amounts of interfering gases that interfere with the measurement of the target gas, and/or at least one target gas is activated such that it is detected by the gas-sensitive layer.
申请公布号 US7707869(B2) 申请公布日期 2010.05.04
申请号 US20050587172 申请日期 2005.04.21
申请人 MICRONAS GMBH 发明人 FLEISCHER MAXIMILIAN;MEIXNER HANS;SIMON ELFRIEDE;LAMPE UWE;POHLE ROLAND
分类号 G01N33/00;B01L5/00;G01N27/00;G01N27/407;G01N27/414 主分类号 G01N33/00
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