发明名称 Ion beams in an ion implanter
摘要 A method of tuning an ion beam in an ion implanter relative to, e.g., ion beam current, energy, size and shape, includes retrieving a set of parameters associated with operation of the ion implanter, at least some of which are stored in a dynamic database, configuring the ion implanter according to the retrieved set of parameters, to thereby provide an ion beam, optimizing the ion beam by varying one or more of the parameters, and updating the parameters stored in the dynamic database which changed during optimization.
申请公布号 US7709817(B2) 申请公布日期 2010.05.04
申请号 US20070806849 申请日期 2007.06.04
申请人 APPLIED MATERIALS, INC. 发明人 BURGESS CHRISTOPHER;KEANE MARTIN
分类号 G21K5/04 主分类号 G21K5/04
代理机构 代理人
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