| 摘要 |
This method for manufacturing a silicon epitaxial wafer includes: a step of growing an epitaxial layer having silicon on a silicon wafer having a main surface of {110}; and a cooling step of cooling the silicon wafer after growing the epitaxial layer. In a first aspect, in the cooling step, a rapid cooling at a cooling rate of more than 500° C./minute is performed in a range of 750° C. to 650° C. In a second aspect, in the cooling step, a passivation film is grown on a main surface of the epitaxial layer at a temperature of 720° C. or more. In a third aspect, a single crystal silicon wafer in which a misorientation angle of a main surface of {110} surface is in a range from 3.0° to 6.2° inclined towards a <110> direction perpendicular to the main surface or a <111> direction is used as the silicon wafer.
|
