发明名称 Insulated gate semiconductor device
摘要 An isolation region is provided around a sense part. The isolation region is provided to have a depth that suppresses spread of a region with an uneven current distribution, which occurs at a peripheral edge of the sense part. Thus, in the sense part, an influence of the region with the uneven current distribution can be suppressed. Since the current distribution can be set more even throughout the sense part, the on-resistance in the sense part can be set closer to its designed value. Thus, a current ratio corresponding to a cell ratio can be obtained as designed. Consequently, current detection accuracy is improved.
申请公布号 US7709890(B2) 申请公布日期 2010.05.04
申请号 US20080050749 申请日期 2008.03.18
申请人 SANYO ELECTRIC CO., LTD.;SANYO SEMICONDUCTOR CO., LTD 发明人 YOSHIMURA MITSUHIRO
分类号 H01L29/78 主分类号 H01L29/78
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