METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of the semiconductor device uses the gray-scale mask. Thereby, the ream of the photo mask is reduced. CONSTITUTION: A gate electrode layer(401) is formed on a substrate(400) having insulating surface. A gate isolation layer(402), an oxide semiconductor film, and a conductive film are successively formed on the gate electrode layer. The first mask layer is formed on the gate isolation layer, the oxide semiconductor film, and the conductive film.