| 发明名称 |
High performance capacitors in planar back gates CMOS |
| 摘要 |
A method of manufacture and device for a dual-gate CMOS structure. The structure includes a first plate in an insulating layer and a second plate above the insulating layer electrically corresponding to the first plate. An isolation structure is between the first plate and the second plate.
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| 申请公布号 |
US7709313(B2) |
申请公布日期 |
2010.05.04 |
| 申请号 |
US20050160999 |
申请日期 |
2005.07.19 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRYANT ANDRES;NOWAK EDWARD J.;WILLIAMS RICHARD Q. |
| 分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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