Magnetic material, and memory and sensor using same

摘要

A magnetic material composed of &egr;-InxFe2-xO3 (wherein 0<x≦̸0.30) crystal in which In is substituted for a portion of the Fe sites of the &egr;-Fe2O3 crystal. The crystal exhibits an X-ray diffraction pattern similar to that of an &egr;-Fe2O3 crystal structure and has the same space group as that of an &egr;-Fe2O3. The In content imparts to the magnetic material a magnetic phase transition temperature that is lower than that of the &egr;-Fe2O3 and a spin reorientation temperature that is higher than that of the &egr;-Fe2O3. The In content can also give the magnetic material a peak temperature of the imaginary part of the complex dielectric constant that is higher than that of the &egr;-Fe2O3.