| 摘要 |
PURPOSE: An oxide semiconductor, a thin film transistor including the same, and a display device including the same according to the present invention are provided to offer a thin film transistor that has a high on-off ratio by forming a channel forming area on an oxide semiconductor layer. CONSTITUTION: A gate electrode(102) and a gate isolation layer(103) are formed on a substrate(101). An oxide semiconductor layer(106) that has the structure of bottom gate is formed on the gate isolation layer. The oxide semiconductor layer is formed using the PVD(Physical Vapor Deposition technique) method. A source electrode(104) and a drain electrode(105) are positioned between the gate isolation layer and the oxide semiconductor layer. The gate electrode is made of high fusion point metal such as Ti, Mo, Cr, Ta, and W. The gate isolation layer is made of the oxidation silicon, the silicon nitride, or the silicon oxide nitride etc. |
